Najm A Al-Rubaye
University of Technology, Iraq
Posters & Accepted Abstracts: J Chromatogr Sep Tech
This work was part of series of experiments using UV laser at 193 nm to generate SiH2 (at 343 K) and MeSiH (298 K) in the presence of O-donor compounds. Phenylsilane (PhSiH3) was employed as precursors to monitor and study the reaction of SiH2. The motivation was to detect and monitor the products of reactions. A method for the determination of rate constant for SiH2 reactions relative to the rate constant of PhSiH3 was formulated. This was used to determine some relative rates of insertion reactions of silylene (SiH2) with MeOMe, MeOH, and H2O. Two chromatographic systems were used for analysis, both of which were equipped with gas sampling valves. The gas sampling loop was heated to 343 K by means of electrothermal heating tape to minimize problems of adsorption. In addition several types of columns were employed for analytical purposes, the packing material and operating conditions of which were dependent on the reaction under investigation. Chromatography was used as an analytical method to determine the composition of the reaction product mixture. An Oxford KX2 excimer laser operating on the ArF laser transition at 193 nm was used as the source of photolysis radiation. The insertion reaction of SiH2 into O-donors showed a rate enhancement effect of methyl-substitution in the substrate, although no products such as H2MeSiOMe were identified.
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