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High-resolution MCsn + - SIMS: An innovative mass spectrometric t | 52191
Journal of Chromatography & Separation Techniques

Journal of Chromatography & Separation Techniques
Open Access

ISSN: 2157-7064

+44 1300 500008

High-resolution MCsn + - SIMS: An innovative mass spectrometric technique for compositional analysis of quantum structures without ‘standards’


International Summit on Current Trends in Mass Spectrometry

July 13-15, 2015 New Orleans, USA

Purushottam Chakraborty

Scientific Tracks Abstracts: J Chromatogr Sep Tech

Abstract :

Excellent detection sensitivity, high dynamic range and superior depth resolution make the SIMS technique extremely powerful for the analysis of low-dimensional structures. However, a serious problem in SIMS analysis lies in its �??�??matrix effect�??�?? that hinders the material quantification. Appropriate corrective measures are therefore, needed to calibrate the secondary ion currents into respective concentrations for accurate compositional analysis. Working in the MCs+-SIMS mode (M �?? element to be analyzed, Cs+ �?? bombarding ions) can circumvent the matrix effect. The emission process for the neutral species M0 is decoupled from the MCs+ ion formation process, in analogy with the ion formation in secondary neutral mass spectrometry (SNMS), resulting in a drastic decrease in matrix effect in the MCs+-SIMS mode. Although this technique has found its applicability in direct quantification, it generally suffers from a low useful yield. In such cases, detection of MCsn + (n=2,3,. . .) molecular ions offers a better sensitivity, even by several orders of magnitude. A complete understanding on the formation mechanisms of these MCsn + (n=2,3,. . .) molecular ion complexes formed in the SIMS process has been explored. We have demonstrated the prospective use of this innovative MCsn +-SIMS technique in the direct interfacial analysis of ultra-thin films, metallic multilayers, semiconductor superlattices, quantum well structures and compositional analysis of MBE grown Si1-xGex alloys without �??standards�??. The talk will address on the fundamentals, challenges and applications of the novel MCsn +-SIMS technique in all its complexities.

Biography :

Purushottam Chakraborty is a Senior Professor at Saha Institute of Nuclear Physics, Kolkata, India and an Honorary Professor at the University of Pretoria, South Africa. His research interests range from �??ion beam analysis of materials�?? to �??XUV optics and photonics�??. He worked at many renowned centres like FOM �?? Institute for Atomic and Molecular Physics, Padova University, ICTP, Laval University, Osaka Electro-communication University, etc. He has published more than 125 papers including reviews and book-chapters. He has been awarded the �??most eminent mass spectrometrist of India�?? and is one of the world leaders in Secondary Ion Mass Spectrometry (SIMS).

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