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UV-Laser induced quantum well intermixing technique and its appli | 3473
Journal of Physical Chemistry & Biophysics

Journal of Physical Chemistry & Biophysics
Open Access

ISSN: 2161-0398

UV-Laser induced quantum well intermixing technique and its applications for photonic integrated devices and circuits


International Conference and Trade fair on Laser Technology

July 20-22, 2015 Orlando, Florida, USA

Mohammad Kaleem

Posters-Accepted Abstracts: J Phys Chem Biophys

Abstract :

Demand for bandwidth continues to increase for the twenty-first century�??s telecommunication industry. The advent of wavelength division multiplexing has greatly increased the quantity of data transported within each optical fiber. Several key technologies are poised to revolutionize the communication industry. The introduction of widely-tunable lasers that are capable of tuning to any channel on the international telecommunications union (ITU) grid will dramatically reduce the cost of running system through sparing functions, allowing system operators to reduce laser inventory, replacing fixed wavelength lasers with tunable lasers. Another key technology is the photonic integrated circuit (PIC), which will allow the cost reduction through monolithic integration. These devices are the ideal building blocks for the development of next generation, high bandwidth fiber optic networks. Integration of discrete components into a single system is similar to those of electronic integration. It enhances the performance and increases the functionality while lowering the cost of manufacturing. Fabrication of photonic integrated circuits requires the integration of multiple bandgap structures within a single semiconductor chip. Quantum well intermixing (QWI) is a promising technique for realizing multifunctional monolithic integrated components. QWI is much simpler, reproducible and effective to modify the band-gap of quantum well structure as compared to selectivearea- epitaxy technique. Post growth quantum well intermixing using UV-laser in selected regions increases the effective band gap energy of a semiconductor QW structures. Thermally activated intermixing process is accelerated by the diffusion of impurities and point defects such as free vacancies and interstitials.

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