Recent progress in the development of type-I GaSb mid-infrared la | 1336
Journal of Physical Chemistry & Biophysics

Journal of Physical Chemistry & Biophysics
Open Access

ISSN: 2161-0398

Recent progress in the development of type-I GaSb mid-infrared laser diode technology for sensing, defense and medical applications

International Conference and Exhibition on Lasers, Optics & Photonics

October 07-09, 2013 Hilton San Antonio Airport, TX, USA

Augustinas Vizbaras, Edgaras Dvinelis, Deividas Kovalenkovas and Kristijonas Vizbaras

Scientific Tracks Abstracts: J Phys Chem Biophys

Abstract :

Type-I mid-infrared laser diodes based on GaSb have long been a promising material and technology platform for room- temperature laser diodes for the 2-4 μm wavelength range. However, long-wavelength laser diodes required complex materials such as quaternary GaInAsSb or AlGaAsSb and even quaternary AlGaInAsSb, which have been reported to be very demanding in terms of epitaxial growth and fabrication technology, in addition to thermal instability, known as the ?blue shift? effect and the miscibility gap. In our work at Brolis Semiconductors, we demonstrate that Al x Ga y In 1-x-y As z Sb 1-z based materials are in fact very stable and controllable once proper technological conditions are met, and can be applied for type-I laser diode development in the entire 1.8-4.0 μm wavelength range utilizing the intrinsic advantages of the type-I optical transition - high gain and low voltage drop - leading to continuous wave operation at room temperature, with threshold input D.C. power less than 50 mW, transparency current density at infinite length < 50 A/cm 2 per QW, operating voltage < 1V and room-temperature emission up to 3.73 μm. Such performance is of particular interest for field applications requiring long battery life-time such as remote sensing systems, defense or handheld systems. At the same time, low input powers contribute to less self-heating, which is advantageous for high-power device (laser bars and stacks) development for illumination, material processing and military countermeasure applications.

Biography :

Augustinas Vizbaras serves as a chief operating officer at Brolis Semiconductors UAB. He received his B.S. in EE from Vilnius University, Lithuania in 2007, M.Sc. in Physics from KTH, Sweden and completed his Ph.D. studies at TU Munich, Germany in 2012. His research interests include mid- infrared and terahertz optoelectronic device technology and molecular beam epitaxy. He has authored and co-authored more than 30 publications in peer-reviewed scientific journals and international conference proceedings (5 invited). In 2011, he co-founded Brolis Semiconductors UAB, a company, developing type-I GaSb mid-infrared laser diodes and molecular beam epitaxy of Sb-based materials.