Journal of Physical Chemistry & Biophysics
Open Access

Optical properties of one-dimensional photonic crystals containing InGaAs/GaAs, InAlAs/InP and InGaAs/InP semiconductor quantum wells

2^nd International Conference on Physics

August 28-30, 2017 Brussels, Belgium

Mahshid Mokhtarnejad

University of Tabriz, Iran

Posters & Accepted Abstracts: J Phys Chem Biophys

Abstract :

In this paper, optical properties of three types of multiple quantum wells (MQWs) made by InGaAs/GaAs, InAlAs/InP and InGaAs/InP, are studied in details. We showed that, the reflectivity of MQWs under normal incident became maximum and under a strong pump the reflectivity reduces. Additionally, we illustrated that by changing the incident angle, the reflectivity also decreases. Moreover, it is demonstrated that by introducing errors in width of barrier and as well as by inserting a thin layer of glass, the reflectivity is again reduced. As a result, by employing the mechanism of Stark effect, MQWs band gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results for the samples we observe that the reflectivity of the MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum amount of reflectivity about 96%.