Low temperature photoluminescence measurement of extremely thin s | 3491
Journal of Physical Chemistry & Biophysics

Journal of Physical Chemistry & Biophysics
Open Access

ISSN: 2161-0398

Low temperature photoluminescence measurement of extremely thin silicon doped InGaAs/GaAs single quantum wells grown by molecular beam epitaxy

International Conference and Trade fair on Laser Technology

July 20-22, 2015 Orlando, Florida, USA

Laxman Survase1, Manohar Nyayate2 and Sen Mathew3

Posters-Accepted Abstracts: J Phys Chem Biophys

Abstract :

In the present investigation InGaAs/GAas single quantum wells (SQWs) doped with silicon are grown by molecular beam Epitaxy (MBE). These samples were extensively investigated by photoluminescence spectroscopy (PL). The PL characterization of three samples with silicon doping concentration 2.3x1016cm-3; 2.5x1016cm-3 and 4x1017cm-3 was carried out. The spectra exhibit a single luminescence peak of the QW. The spectra also depict the Band gap of GaAs, free excite energy of GaAs and band excitation. The present investigation studies the effect of concentration of Si doping on InGaAs/GaAs QW. The effect of silicon on In GaAsSi/GaAs quantum well structures is investigated using high resolution X-ray diffraction technique (HRXRD). The growth of quantum well is studied by surface electron microscopy (SEM). The surface morphology is studied using atomic force microscopy (AFM). It is observed from the AFM images that the roughness increases as Si doping increases. The incorporation of silicon also induces alloy non-uniformity in the quantum well, leading to an increased surface roughness. We found that the FWHM of the rocking curves of Si-doped InGaAs increase with increasing Si concentration, indicating the degradation of the crystal quality with increasing doping level.