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Hot carriers THz harmonic generation in graphene | 5030
Journal of Physical Chemistry & Biophysics

Journal of Physical Chemistry & Biophysics
Open Access

ISSN: 2161-0398

Hot carriers THz harmonic generation in graphene


3rd International Conference and Exhibition on Lasers, Optics & Photonics

September 01-03, 2015 Valencia, Spain

Jean-Pierre Leburton

University of Illinois, USA

Posters-Accepted Abstracts: J Phys Chem Biophys

Abstract :

In this talk, we will discuss the onset of sharp resonances exhibited by hot carriers in graphene under the influence of a DC and a-c fields in the presence of spatially and temporarily modulated scattering. These resonances occur when the period of the a-c field corresponds to the time taken by quasi-ballistic carriers to drift over a spatial scattering period, provided the latter is shorter than the distance taken by carriers to emit an optic phonon. Such system can be achieved with inter-digitated gates energized with an a-c bias on graphene layers. Gate separation and fields to achieve ballistic transport would result in resonances in the terahertz range, with the generation of higher harmonics characterized by large Q-factors, which are tunable with gate spacing, and well suited for THz detection.

Biography :

Email: jleburto@illinois.edu

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