Journal of Physical Chemistry & Biophysics
Open Access

Correlation between electron mobility and static dielectric permittivity of n-InSb

International Conference and Trade fair on Laser Technology

July 20-22, 2015 Orlando, Florida, USA

K Alfaramawi1,2 and M A Alzamil1

Posters-Accepted Abstracts: J Phys Chem Biophys

Abstract :

Numerical calculations of the static dielectric permittivity- dependent electron mobility due to different types of elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing of donor concentration. The temperature dependence of the electron mobility from 10 K up to 300 K has been demonstrated. Generally, the electron mobility shows peak behavior in this range of temperature. The direct correlation between the electron mobility and the static dielectric permittivity at 300 K was investigated. The dependence of the electron mobility on donor concentration was discussed when the static dielectric permittivity is assumed to be varying and when it is assumed to be a constant. The difference in behavior was noticed particularly at high donor concentrations.