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Channel length modulation effect on monolayer graphenenanoribbonfield effect transistor
Nanotechnology Congress & Expo
August 11-13, 2015 Frankfurt, Germany
Mehdi Saeidmanesh
Scientific Tracks Abstracts: J Nanomed Nanotechnol
Abstract:
Recently, Graphene Nanoribbon Field Effect Transistors (GNR FETs) is attracting a great deal of attention due to their better performance in comparison with conventional devices. In this paper, channel length Modulation (CLM) effect on the electrical characteristics of GNR FETs is analytically studied and modeled. To this end, the spatial distribution of the electric potential along the channel and current-voltage characteristic of the device are modeled. The obtained results of analytical model are compared against the experimental data of published works. As a result, it is observable that considering the effect of CLM, the current-voltage response of GNR FET is more realistic.
Biography :
Mehdi Saeidmanesh is a PhD student at UniversitiTeknologi Malaysia (UTM),Faculty of Electrical Engineering, Computational Nanoelectronics Research Group (CoNE). His research interest includes analytical modeling of graphene based devices such as graphene FETs, and graphene gas/bio sensors. He has managed to publish more than 20 papers in reputed journals as the first and co-author.